型号 IPI147N12N3 G
厂商 Infineon Technologies
描述 MOSFET N-CH 120V 56A TO262-3
IPI147N12N3 G PDF
代理商 IPI147N12N3 G
标准包装 500
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 120V
电流 - 连续漏极(Id) @ 25° C 56A
开态Rds(最大)@ Id, Vgs @ 25° C 14.7 毫欧 @ 56A,10V
Id 时的 Vgs(th)(最大) 4V @ 61µA
闸电荷(Qg) @ Vgs 49nC @ 10V
输入电容 (Ciss) @ Vds 3220pF @ 60V
功率 - 最大 107W
安装类型 通孔
封装/外壳 TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装 PG-TO262-3
包装 管件
其它名称 SP000652744
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